NCE55H11
Description
The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.5mΩ) - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
