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NCE55H12 - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE55H12 N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE55H12

Datasheet Details

Part number	NCE55H12
Manufacturer	NCE Power Semiconductor
File Size	393.19 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE55H12 Datasheet
Additional preview pages of the NCE55H12 datasheet.

Product details

Description

The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Aug 1, 2014 |