NCE55H12 Datasheet | NCE Power Semiconductor

Pb Free Product http://.ncepower. NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - - - Power switching application Hard Switched and High Frequency Circuits...