Datasheet4U Logo Datasheet4U.com

NCE6075 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number NCE6075
Manufacturer NCE Power
File Size 325.93 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6075 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCE6003M N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE6003X N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE6003XY N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE6003Y N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE6005AR N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

Other Datasheets by NCE Power

Part Number Description
NCE6075K NCE N-Channel Enhancement Mode Power MOSFET
NCE6003 NCE N-Channel Enhancement Mode Power MOSFET
NCE6005R NCE N-Channel Enhancement Mode Power MOSFET
NCE6005S N-Channel Enhancement Mode Power MOSFET
NCE6008AS N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCE6075 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.
Published: |