NCE6075K
Description
The NCE6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) - High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
