Datasheet Details
| Part number | NCE75H26T |
|---|---|
| Manufacturer | NCE Power |
| File Size | 435.11 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE75H26T Datasheet
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General Description
The NCE75H26T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in automotive applications and a wide variety of other applications.
Key Features
- VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V （Typ：2.3 mΩ） Schematic diagram.
- Good stability and uniformity with high EAS.
- Special process technology for high ESD capability.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Excellent package for good heat dissipation.