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EQR1011-3030C-S - SiPMs

Download the EQR1011-3030C-S datasheet PDF. This datasheet also covers the EQR1011-1010C variant, as both devices belong to the same sipms family and are provided as variant models within a single manufacturer datasheet.

Features

  • Small Cell and Pitch.
  • High Cell Density and Fill Factor.
  • Large Dynamic Range and High PDE.
  • Fast Rise Time and Narrow Pulse Width.
  • Short Recovery Time and High Time Resolution.
  • Small Terminal Capacitance and Cost Effective.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EQR1011-1010C-SNDL.pdf) that lists specifications for multiple related part numbers.

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Part Number Description Manufacturer

Other Datasheets by NDL

Part Number Description
EQR1011-1010C-S SiPMs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NDL EQR10 Series SiPMs For a conventional SiPM, the quenching resistors are usually fabricated on the surface, and used to connect all APD cells to trace metal lines. In contrast, NDL SiPM employs intrinsic epitaxial layer as the quenching resistors (EQR), and uses a continuous silicon cap layer as an anode to connect all the APD cells. As a result, the device has more compact structure and simpler fabrication technology, allows larger micro cell density (larger dynamic range) while retaining high photon detection efficiency (PDE).
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