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NP80N055DLE - Switching N-Channel Power MOSFET

Download the NP80N055DLE datasheet PDF. This datasheet also covers the NP80N055 variant, as both devices belong to the same switching n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode NP80N055ELE (TO-220AB).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N055_NECElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4U.com Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) • Low Ciss : Ciss = 2900 pF TYP.