NP80N055ELE Description
These products are N-channel MOS Field Effect .. Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications.
NP80N055ELE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 4
- Low Ciss : Ciss = 2900 pF TYP
- Built-in gate protection diode