2SA1376A
2SA1376A is PNP Silicon Transistor manufactured by NEC.
FEATURES
- High voltage
VCEO:
- 180 V /
- 200 V (2SA1376/2SA1376A)
- Excellent h FE linearity
- High total power dissipation in small dimension: PT: 0.75 W
- plementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Symbol
Ratings
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)- PT
Tj Tstg
- 200
- 180/- 200
- 5
- 100
- 200 0.75 150
- 55 to +150
- PW ≤ 10 ms, duty cycle ≤ 50%
Unit V V V m A m A W °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation...
