2SA733 - PNP SILICON TRANSISTOR

NEC (now Renesas Electronics)

General Description

The 2SA733 is designed for use in diver stage of AF amplifier.

Key Features

High hFE and Excellent Linearity: 200 TYP. hFE (VCE =.
6.0 V, IC =.
1.0 mA).

📥 Download Datasheet

2SA733 pnp silicon transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SA733
Manufacturer	NEC (now Renesas Electronics)
File Size	263.40 KB
Description	PNP SILICON TRANSISTOR
Datasheet	2SA733 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SA733	PNP Transistor	Unisonic Technologies
2SA733	PNP EPITAXIAL PLANAR TRANSISTOR	DC COMPONENTS
2SA733	PNP Transistors	Kexin
2SA733	PNP Transistor	SEMTECH
2SA733	PNP Transistor	SeCoS

Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
2SA1006	PNP/NPN TRANSISTOR
2SA1006A	PNP/NPN TRANSISTOR
2SA1006B	PNP/NPN TRANSISTOR
2SA1009	PNP SIlicon Power Transistor
2SA1009A	PNP SIlicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% −60 V −50 V −5.