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2SB984 Datasheet PNP Silicon Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: CSD18537NKCS .ti. SLPS390 – JUNE 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples:.

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Pin Out Drain (Pin 2) TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM PD TJ, TSTG EAS Pulsed Drain Current (1) Power Dissipation Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 33A, L = 0.1mH, RG = 25Ω VALUE 60 ±20 50 54 34 91 79 –55 to 150 55 UNIT V V A A W °C mJ Gate (Pin 1) Source (Pin 3) (1) Pulse duration ≤300μs, duty cycle ≤2% 36 RDS(on) - On-State Resistance (mΩ) 32 28 24 20 16 12 8 4 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 25A TC = 125ºC Id = 25A GATE CHARGE 10 9 8 7 6 5 4 3 2 1 0 0 3 6 9 Qg - Gate Charge (nC) 12 15 G001 ID = 25A VDS = 30V 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

Key Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C VDS Qg Qgd RDS(on) VGS(th).

More Datasheets from NEC (now Renesas Electronics)

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2SB984 Distributor