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2SC2958 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction.
  • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959.

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Full PDF Text Transcription (Reference)

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DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 160 140/160 5.0 500 1.0 1.