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2SC2959 - NPN SILICON EPITAXIAL TRANSISTOR

Download the 2SC2959 datasheet PDF. This datasheet also covers the 2SC2958 variant, as both devices belong to the same npn silicon epitaxial transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction.
  • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC2958_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2954 Silicon NPN RF Transistor INCHANGE
2SC2954 NPN Silicon Transistor Renesas
2SC2901 NPN Silicon Epitaxial Planar Transistor SEMTECH
2SC2901 NPN Silicon Epitaxial Planar Transistor Bluecolour
2SC2901 NPN Silicon Epitaxial Planar Transistor PACO

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC2954 NPN Silicon Transistor
2SC2958 NPN SILICON EPITAXIAL TRANSISTOR
2SC2901 NPN SILICON TRANSISTOR
2SC2946 NPN SILICON EPITAXIAL TRANSISTOR
2SC2946 (2SC2885 / 2SC2946) Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 160 140/160 5.0 500 1.0 1.