NEC 2SC2959
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SC2959 |
|---|---|
| Datasheet | 2SC2959 Download |
| Manufacturer |  NEC |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction● Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 160 140/160 5.0 500 1.0 1.0 150 −55 to +150 Unit V V V mA A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 100 V, IE = 0 Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE ** VCE = 2.0 V, IC = 100 mA DC base voltage VBE ** VCE = 5.0 V, IC = 20 mA Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A Base saturation voltage VBE(s...
