• Part: 2SC3603
  • Description: NPN EPITAXIAL SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 89.68 KB
Download 2SC3603 Datasheet PDF
NEC
2SC3603
FEATURES - Low noise : NF = 2.1 d B TYP. @ f = 2.0 GHz - High power gain : GA = 10 d B TYP. @ f = 2.0 GHz 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 12 3 100 580 200 -65 to +150 UNIT V V V m A m W °C °C PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 φ 2.1 1.8 MAX. 0.55 3.8 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 45 ° ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure Insertion Gain Maximum Available Gain Power Gain SYMBOL ICBO IEBO h FE f T Cre NFNote |S21e|2 MAG GA TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 m A Pulse VCE = 10 V, IC = 20 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 7 m...