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2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz.
  • High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz • High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN.