Datasheet Details
| Part number | 2SC3603 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 89.68 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Datasheet | 2SC3603_NEC.pdf |
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Overview: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.
| Part number | 2SC3603 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 89.68 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Datasheet | 2SC3603_NEC.pdf |
|
|
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| Part Number | Description |
|---|---|
| 2SC3604 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC3615 | NPN SILICON TRANSISTOR |
| 2SC3616 | NPN SILICON TRANSISTOR |
| 2SC3617 | NPN Transistor |
| 2SC3618 | NPN Transistor |
| 2SC3622 | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3622A | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3623 | NPN SILICON TRANSISTOR |
| 2SC3623A | NPN SILICON TRANSISTOR |
| 2SC3624 | NPN SILICON EPITAXIAL TRANSISTOR |