2SC3603 Description
DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.
2SC3603 Key Features
- Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
- High power gain : GA = 10 dB TYP. @ f = 2.0 GHz