2SC3622A Overview
Key Features
- High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
- Low VCE(sat)
| Part | 2SC3622A |
|---|---|
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Category | Transistor |
| Manufacturer | NEC |
| Size | 140.25 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3620 | Toshiba | Silicon NPN Transistor |
| 2SC3621 | Toshiba | NPN Transistor |
| C3621 | Toshiba | 2SC3621 |
| 2SC3629 | Mitsubishi Electric | NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
| C3620 | Toshiba | 2SC3620 |