NEC 2SC3622A
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SC3622A |
|---|---|
| Datasheet | 2SC3622A Download |
| Manufacturer |  NEC |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
PACKAGE DRAWING (UNIT: mm)● High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
● Low VCE(sat):
● High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg 12 150 250 150 −55 to +150 Ratings 2SC3622 2SC3622A 60 50 15 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage temperature Fall time Symbol ICBO IEBO hFE1 * hFE2 * VBE * VCE(sat) * VBE(sat) * fT Cob ton tstg toff Conditions VCB = 50 V, IE = 0 VEB = 10 V, IC = 0 VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC...
