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2SC3622 - NPN SILICON EPITAXIAL TRANSISTOR

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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.