Datasheet4U Logo Datasheet4U.com

2SC3623A - NPN SILICON TRANSISTOR

Download the 2SC3623A datasheet PDF. This datasheet also covers the 2SC3623 variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA.
  • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA.
  • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC3623_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3620 Silicon NPN Transistor Toshiba Semiconductor
2SC3621 NPN Transistor Toshiba Semiconductor
2SC3621 NPN Transistor INCHANGE
2SC3624 Transistor Kexin
2SC3626 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC3623 NPN SILICON TRANSISTOR
2SC3622 NPN SILICON EPITAXIAL TRANSISTOR
2SC3622A NPN SILICON EPITAXIAL TRANSISTOR
2SC3624 AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR
2SC3624A AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg Ratings 2SC3623 2SC3623A 60 50 12 15 150 250 150 −55 to +150 Unit V V V mA mW °C °C PACKAGE DRAWING (UNIT: mm) Electrode connection 1. Emitter (E) 2. Collector (C) 3.