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2SC4225 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band.

It has large dynamic range and good current characteristics.

Key Features

  • 2.0 ± 0.2 0.3 +0.1.
  • Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) 0.65 0.65 2 0.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES 2.0 ± 0.2 0.3 +0.1 –0 • Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) 0.65 0.65 2 0.