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2SC5288 - NPN TRANSISTOR

Key Features

  • P.
  • 1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 2.9±0.2 (1.8) 0.85 0.95 EIAJ: SC-61 1 0.6 +0.1.
  • 0.05 Part Number 2SC5288-T1 Quantity 3 Kpcs/Reel Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 1.1 +0.2.
  • 0.1 5° 5° 0 to 0.1 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs. ) 5° 5°.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). PACKAGE DRAWING (Unit: mm) 0.4+0.1 –0.05 2.8 +0.2 –0.3 1.5+0.2 –0.1 2 3 FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 2.9±0.2 (1.8) 0.85 0.95 EIAJ: SC-61 1 0.6 +0.1 –0.05 Part Number 2SC5288-T1 Quantity 3 Kpcs/Reel Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 1.1 +0.2 –0.1 5° 5° 0 to 0.1 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.