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2SC5006 - NPN TRANSISTOR

General Description

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

  • Low Voltage Use.
  • High fT.
  • Low Cre.
  • Low NF : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 ± 0.1 0.8 ± 0.1.

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Other Datasheets by NEC (now Renesas Electronics)

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2SC5004 NPN TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DIMENSIONS in millimeters • High |S21e|2 : 9 dB TYP.