NEC 2SC5006
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.| Part No. | 2SC5006 |
|---|---|
| Datasheet | 2SC5006 Download |
| Manufacturer |  NEC |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.FEATURES
● Low Voltage Use.● High fT
● Low Cre
● Low NF : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DIMENSIONS in millimeters
● High |S21e|2 : 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 1.6 ± 0.1 1.0 0.5 0.2+0.1 –0 0.5 ORDERING INFORMATION PART NUMBER 2SC5006 2SC5006-T1 3 1 QUANTITY 50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 0.75 ± 0.05 0.6 * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. 1. Emitter 2. Base 3. Collector
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3.0 100 125 150 –60 to +150 V V V mA mW ˚C ˚C Document No.
