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2SC5006 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN RF Transistor.

General Description

·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 100 mA 125 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ 2SC5006 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC5006 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT ICBO Collector Cutoff Current VCB= 10V;

IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 1V;

2SC5006 Distributor