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2SC5009 - NPN TRANSISTOR

General Description

The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

  • Low Voltage Use.
  • High fT.
  • Low Cre.
  • Low NF.
  • High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 3 1.
  • Ultra Super Mini Mold Package. 0.6 |S21e|2 : 0.75± 0.05.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5004 NPN TRANSISTOR
2SC5005 NPN TRANSISTOR
2SC5006 NPN TRANSISTOR
2SC5007 NPN TRANSISTOR
2SC5008 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique. 1.6± 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6± 0.1 0.8± 0.1 2 0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5 FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF • High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP.