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2SC5009 Datasheet PDF

NEC 2SC5009

The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique.
Part No. 2SC5009
Datasheet 2SC5009 Download
Manufacturer
NEC
Description NPN TRANSISTOR
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2SC5009 datasheet page 1 preview

DESCRIPTION

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. 1.6± 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6± 0.1 0.8± 0.1 2 0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5

FEATURES

● Low Voltage Use.
● High fT
● Low Cre
● Low NF
● High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 3 1
● Ultra Super Mini Mold Package. 0.6 |S21e|2 : 0.75± 0.05 ORDERING INFORMATION PART NUMBER 2SC5009 2SC5009-T1 QUANTITY 50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 1. Emitter 2. Base 3. Collector * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS

(TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to...
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