2SC5009 Datasheet | NEC

DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique. 1.6± 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6± 0.1 0.8± 0.1 2 0.2+0.1 - 0 0.5 0.3 +0.1 - 0 0.15 +0.1 - 0.05 FEATURES - Low Voltage Use. - High f T - Low Cre - Low NF - High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 m A, f = 2 GHz) : 0.3 p F TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 d B TYP. (@ VCE = 3 V, IC = 5 m A, f = 2 GHz) : 2.5 d B TYP. (@ VCE = 3 V, IC = 3 m A, f = 2 GHz) - Ultra Super Mini Mold Package. |S21e|2 : 0.75± 0.05 ORDERING INFORMATION PART NUMBER 2SC5009 2SC5009-T1 QUANTITY 50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 1. Emitter 2. Base 3. Collector - Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 - 65 to +150 V V V m A m W ˚C ˚C Document No. P10388EJ2V0DS00 (2nd edition) (Previous No. TD-2430) Date Published July 1995 P Printed in Japan 0 to 0.1 © ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed- back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO h FE f T Cre |S21e|2 NF 7.0 75 12.0 0.3 8.5 2.5 4.0 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz p F d B d B UNIT TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 m A- 1 VCE = 3 V, IC...