2SC5008 Description
The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.
2SC5008 Key Features
- Low Voltage Use
- High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
- Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
- High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
- Ultra Super Mini Mold Package
- Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
- Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs