NEC 2SC5008
The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.DESCRIPTION
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2 0.5 1.6 ± 0.1 1.0 0.2+0.1 –0 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5FEATURES
● Low Voltage Use.● High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
● Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
● High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
● Ultra Super Mini Mold Package.
● Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 3 1 0.75 ± 0.05 0.6 ORDERING INFORMATION PART NUMBER 2SC5008 2SC5008-T1 1. Emitter 2. Base 3. Collector PACKING STYLE QUANTITY 50 pcs./Unit 3 kpcs./Reel Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to B...