2SC5008
2SC5008 is NPN TRANSISTOR manufactured by NEC.
DESCRIPTION
The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.
PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2
0.5 1.6 ± 0.1 1.0 0.2+0.1
- 0 0.3 +0.1
- 0 0.15
+0.1
- 0.05
FEATURES
- Low Voltage Use.
- High f T: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 m A, f = 2 GHz)
- Low NF: 1.9 d B TYP. (@ VCE = 3 V, IC = 5 m A, f = 2 GHz)
- High |S21e|2: 7.5 d B TYP. (@ VCE = 3 V, IC = 5 m A, f = 2 GHz)
- Ultra Super Mini Mold Package.
- Low Cre: 0.3 p F TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
0.75 ± 0.05
ORDERING INFORMATION
PART NUMBER 2SC5008 2SC5008-T1
1. Emitter 2. Base 3. Collector
PACKING STYLE
QUANTITY 50 pcs./Unit 3 kpcs./Reel
Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape.
- Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 125 m W 150
- 65 to + 150 ˚C ˚C V V V m A
Document No. P10387EJ2V0DS00 (2nd edition) (Previous No. TD-2433) Date Published July 1995 P Printed in Japan
0 to 0.1
©
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO h FE f T Cre |S21e|2 NF 5.5 80 5.5 8.0 0.3 7.5 1.9 3.2 0.7 MIN. TYP. MAX. 1.0 1.0 160 GHz p F d B d B UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 m A- 1 VCE = 3...
