NEC 2SC5408
NPN TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PIN CONNECTIONS PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 10 30 150 –65 to +150 UNIT V V V mA mW °C °C E: Emitter C: Collector B: Base Because this product uses high-frequency process, avoid excessive input of static electricity, etc. Document No. P12095EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan 0 to 0.1 © E E C E T1E 1997 2SC5408ELECTRICAL CHARACTERISTICS
(TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 7 mA Note 1 VCE = 2 V, IC = 7 mA, f = 2.0 GHz VCB = 2 V, IE = 0, f = 1 MHz Note 2 VCE = 2 V, IC = 7 mA, f = 2.0 GHz VCE = 2 V, IC = 1 mA, f = 2.0 GHz MIN.