q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
q
High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C)
Ratings 80 50 6 6 3 1 20 2.0 150.
55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm
s Features
q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
q
High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C)
Ratings 80 50 6 6 3 1 20 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.
2SC5405 Datasheet
