Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm s Features q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2 q
High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C)
Ratings 80 50 6 6 3 1 20 2.0 150
- 55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2 s...