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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5432
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5006
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05 0.8 ± 0.1
1.4 ± 0.1 (0.9) 0.45 0.45
0.2 +0.1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 100 125 150 –65 to +150 UNIT V V
TC
3
1
0.59 ± 0.
2SC5432 Datasheet
