NEC 2SC5433
NPN TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 10 1.5 65 125 150 –65 to +150 UNIT V V TE 3 1 mW °C °CELECTRICAL CHARACTERISTICS
(TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mANote 1 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector MIN. TYP. MAX. 800 800 UNIT nA nA 80 4.5 7.0 145 GHz 0.9 pF dB 2.7 dB VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz 10.0 12.0 1.4 Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.