Datasheet4U Logo Datasheet4U.com

2SC5761 - NPN SiGe RF TRANSISTOR

Key Features

  • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
  • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz.
  • SiGe technology (fT = 60 GHz, fmax = 60 GHz).
  • Flat-lead 4-pin thin-type super minimold (M04) package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5763 NPN TRANSISTOR Sanyo Semicon Device
2SC5763 NPN Transistor INCHANGE
2SC5764 NPN TRANSISTOR Sanyo Semicon Device
2SC5764 NPN Transistor INCHANGE
2SC5765 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5752 NPN SILICON RF TRANSISTOR
2SC5754 NPN SILICON RF TRANSISTOR
2SC5787 NPN SILICON RF TRANSISTOR
2SC5004 NPN TRANSISTOR
2SC5005 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5761 2SC5761-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.