2SC5761 Overview
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04).
2SC5761 Key Features
- Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
- Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
- SiGe technology (fT = 60 GHz, fmax = 60 GHz)
- Flat-lead 4-pin thin-type super minimold (M04) package
- 8 mm wide embossed taping
- Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape