NEC 2SD1616
the 2SD1616A.) The information in this document is subject to change without notice.| Part No. | 2SD1616 |
|---|---|
| Datasheet | 2SD1616 Download |
| Manufacturer |  NEC |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)● Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
● Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse)* PT Tj Tstg Ratings 2SD1616 2SD1616A 60 120 50 6.0 1.0 2.0 0.75 150 −55 to +150 60 Unit V V V A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50%ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1** hFE2** VBE** VCE(sat)** VBE(sat)** Cob...
