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2SD1616A - NPN SILICON EPITAXIAL TRANSISTOR

Download the 2SD1616A datasheet PDF. This datasheet also covers the 2SD1616 variant, as both devices belong to the same npn silicon epitaxial transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA).
  • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A.
  • Complementary transistor with the 2SB1116 and 1116A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD1616_NEC.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with the 2SB1116 and 1116A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(Pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 2SD1616 2SD1616A 60 120 50 60 6.0 1.0 2.0 0.