NEC 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SD1616A |
|---|---|
| Datasheet | 2SD1616A Download |
| Manufacturer |  NEC |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)● Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
● Complementary transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(Pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 2SD1616 2SD1616A 60 120 50 60 6.0 1.0 2.0 0.75 150 −55 to +150 Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 Emitter cut
