Weitron Technology 2SD1616A
NPN Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.75 150 -55 to +150 2SD1616A 60 120 Unit Vdc Vdc Vdc Adc W C CELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0 Vdc, I C=0) 2SD1616 2SD1616A 2SD1616 2SD1616A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 50 60 60 120 6.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON 2SD1616 2SD1616AELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vd...