The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
2SD1616 2SD1616A
NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.75 150 -55 to +150 2SD1616A 60 120 Unit Vdc Vdc Vdc Adc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.