2SD1616A Datasheet and Specifications PDF

The 2SD1616A is a NPN Silicon Epitaxial Planar Transistor.

Key Specifications

Max Operating Temp150 °C
Part Number2SD1616A Datasheet
ManufacturerGalaxy Microelectronics
Overview NPN Silicon Epitaxial Planar Transistor FEATURES  Low VCE(sat).  Large PT in small dimension with versatility.  RoHS compliant with Halogen-free Product Specification 2SD1616A ORDERING INFORMATIO.
* Low VCE(sat).
* Large PT in small dimension with versatility.
* RoHS compliant with Halogen-free Product Specification 2SD1616A ORDERING INFORMATION Type No. 2SD1616A-Y 2SD1616A-G 2SD1616A-L Marking 16A 16A 16A SOT-89 Package Code SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise .
Part Number2SD1616A Datasheet
DescriptionNPN EPITAXIAL SILICON TRANSISTOR
ManufacturerUnisonic Technologies
Overview * Audio frequency power amplifier * Medium speed switching 1 SOT-89 1 SOT-223 1 SIP-3 1 TO-92 1 TO-92SP  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen-Free 2SD1616L-x-AA3-. B E C B E C B Packing Tape Reel Tape Reel Bulk Tape Box Bulk Bulk Tape Reel Tape Reel Bulk Tape Box Bulk Bulk Copyright © 2025 Unisonic Technologies Co., Ltd 1 of 5 QW-R201-008.L 2SD1616/A
* MARKING PACKAGE SOT-223 SOT-89 SIP-3 TO-92 TO-92SP 2SD1616 NPN SILICON TRANS.
Part Number2SD1616A Datasheet
DescriptionNPN Silicon Transistor
ManufacturerSEMTECH
Overview ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into thre. at VCE=2V, IC=100mA R O Y at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage 2) at IC=1A, IB=50mA Base Saturation Voltage 2) at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, I.
Part Number2SD1616A Datasheet
DescriptionNPN Transistors
ManufacturerWeitron Technology
Overview 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitte. untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitt.

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