2SD1616
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2SD1616 2SD1616A
NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.75 150 -55 to +150 2SD1616A 60 120 Unit Vdc Vdc Vdc Adc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 2.0 m Adc, IB=0) Collector-Base Breakdown Voltage (IC= 10 u Adc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 u Adc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0 Vdc, I C=0) 2SD1616 2SD1616A 2SD1616 2SD1616A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 50 60 60 120 6.0 Max 0.1 0.1 Unit Vdc Vdc Vdc u Adc u Adc
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2SD1616 2SD1616A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min...
