Galaxy Century Microelectronics 2SD1616A
NPN Silicon Epitaxial Planar Transistor
| Part No. | 2SD1616A |
|---|---|
| Datasheet | 2SD1616A Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat).● Large PT in small dimension with versatility.
● RoHS compliant with Halogen-free Product Specification 2SD1616A ORDERING INFORMATION Type No. 2SD1616A-Y 2SD1616A-G 2SD1616A-L Marking 16A 16A 16A SOT-89 Package Code SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 6 Collector Current –Continuous DC 1 IC Pulse width≤10ms 2 PC Collector Power Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ STM0300A 1 Product Specification NPN Silicon Epitaxial Planar Transistor 2SD1616A
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 120 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 Collector cut-off current ICBO VCB...
