2SD1616
ST 2SD1616 / 2SD1616A
NPN Silicon Transistor
The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application.
The transistor is subdivided into three groups R, O and Y, according to its DC current gain
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 OC)
Collector Base Voltage
2SD1616 2SD1616A
Collector Emitter Voltage
2SD1616 2SD1616A
Emitter Base Voltage
Collector Current (DC) Collector Current (pulse)1)
Power Dissipation
Junction Temperature
Storage Temperature Range
1) PW? 10ms, Duty Cycle? 50%
Symbol
VCBO
VCEO
VEBO IC IC Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 60 120 50 60 6 1 2 0.75 150
-55 to +150
Unit
V A A W ? ?
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: .rct.ru
®
ST 2SD1616 / 2SD1616A
Characteristics at Tamb=25 OC
DC Current Gain 2) at...