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2SD2163 - NPN Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Mold package that does not require an insulating board or insulation bushing.
  • High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A).
  • Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET DARLINGTON POWER TRANSISTOR www.DataSheet4U.com 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING PACKAGE DRAWING (UNIT: mm) The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals. FEATURES • Mold package that does not require an insulating board or insulation bushing • High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A) • Low collector saturation voltage: VCE(sat) = 1.5 V MAX.