2SD2163 Description
DATA SHEET DARLINGTON POWER TRANSISTOR .. 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING PACKAGE DRAWING (UNIT: mm) The 2SD2163 is a mold power transistor developed for lowspeed high-current switching.
2SD2163 Key Features
- Mold package that does not require an insulating board or insulation bushing
- High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A)
- Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A)