NEC 2SD2163
The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals.| Part No. | 2SD2163 |
|---|---|
| Datasheet | 2SD2163 Download |
| Manufacturer |  NEC |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Mold package that does not require an insulating board or insulation bushing● High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A)
● Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 150 100 8.0 ±10 ±20 1.0 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C Electrode Connection * PW ≤ 10 ms, duty cycle ≤ 50%ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Collector cutoff current DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol ICBO hFE** VCE(sat)** VBE(sat)** ton tstg tf Conditions VCB = 100 V, IE = 0 VCE = 2.0 V, IC = 10 A IC = 10 A, IB = 25 mA IC = 10 A, IB = 25 mA IC = 10 A, IB1 = −IB2 = 25 mA RL = 5.0 Ω, VCC ≅ 50 V Refer to the test circuit.
