2SD2583 Datasheet | NEC

DATA SHEET SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS Features - Low VCE(sat) VCE(sat) = 0.15 V Max (@l C/l B = 1.0 A/50 m A) - High DC Current Gain h EF = 150 to 600 (@VCE = 2.0 V, l C = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Volteage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)- Base Current (DC) - PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.0 W 150 °C - 55 to 150 °C VCB0 VCE0 VEB0 IC(DC) IC(Pulse) IB(DC) 30 V 30 V 6.0 V 5.0 A 10 A 2.0A 1 2 3 2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.) 1.2 (0.047) 0.55+0.08 - 0.05 (0.021) 0.8 +0.08 - 0.05 (0.031) 2.3 2.3 (0.090) (0.090) 1.2 (0.047) 1. Emitter 2. Collector connected to mounting plane 3. Base ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Collector Cutoff Currnet Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Collector Saturation Voltage Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICB0 IEB0 h FE1 h FE2 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) f T Cob TEST CONDITIONS VCB = 30 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 4.0 A IC = 1.0 A, IB = 50 m A IC = 2.0 A, IB = 0.1 A IC = 4.0 A, IB = 0.2 A IC = 2.0 A, IB = 0.1 A VCE = 10 V, IE = 50 m A VCB = 10 V, IE = 0, f = 1 MHz 150 50 0.07 0.13 0.24 0.86 120 77 0.15 0.25 0.50 1.50 MIN. TYP. MAX. 100 100 600 UNIT n A n A - - V V V V MHz p F The information in this document is subject to change without notice. Document No. D10628EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © φ 3.2 ± 0.2 (φ...