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2SD2583 - NPN Transistor

Key Features

  • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA).
  • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Volteage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.