NEC 2SD2583
NPN Transistor
| Part No. | 2SD2583 |
|---|---|
| Datasheet | 2SD2583 Download |
| Manufacturer |  NEC |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)● High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Volteage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.0 W 150 °C −55 to 150 °C VCB0 VCE0 VEB0 IC(DC) IC(Pulse) IB(DC) 30 V 30 V 6.0 V 5.0 A 10 A 2.0A 1 2 3 2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.) 1.2 (0.047) 0.55+0.08 −0.05 (0.021) 0.8 +0.08 −0.05 (0.031) 2.3 2.3 (0.090) (0.090) 1.2 (0.047) 1. Emitter 2. Collector connected to mounting plane 3. Base
ELECTRICAL CHARACTERISTICS
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