2SD2583 - NPN Silicon Epitaxial Power Transistor

Datasheet Summary

Features

Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA).
High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A).

Thinki Semiconductor

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Datasheet Details

Part number	2SD2583
Manufacturer	Thinki Semiconductor
File Size	282.54 KB
Description	NPN Silicon Epitaxial Power Transistor
Datasheet	2SD2583 Datasheet
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2SD2583 ® 2SD2583 Pb Pb Free Plating Product NPN Silicon Epitaxial Power Transistor FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage VCB0 30 V Collector to Emitter Volteage VCE0 30 V Emitter to Base Voltage VEB0 6.0 V Collector Current (DC) IC(DC) 5.0 A Collector Current (Pulse)* IC(Pulse) 10 A Base Current (DC) IB(DC) 2.0A * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) PT 10 W Total Power Dissipation (TA = 25 °C) PT 1.

Published: Aug 21, 2017 |