NEC 2SJ207
The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply.| Part No. | 2SJ207 |
|---|---|
| Datasheet | 2SJ207 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.FEATURES
● Directly driven by ICs having a 3 V power supply.● Not necessary to consider driving current because of its high input impedance.
● Possible to reduce the number of parts by omitting the bias resistor.
● Has low on-state resistance RDS(on) = 4.0 Ω MAX. VGS = －2.5 V, ID = －30 mA RDS(on) = 1.5 Ω MAX. VGS = －4.0 V, ID = －500 mA <R>
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note 1 Total Power Dissipation Note 2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg −16 m16 m1.0 m2.0 2.0 150 −55 to +150 V V A A W °C °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When using ceramic board of 16 cm2 × 0.7 mm PACKAGE DRAWING (Unit: mm) The information in this document is subject to change without notice.
