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2SJ207 - P-Channel MOSFET

General Description

which can be driven by 2.5 V power supply.

Key Features

  • Directly driven by ICs having a 3 V power supply.
  • Not necessary to consider driving current because of its high input impedance.
  • Possible to reduce the number of parts by omitting the bias resistor.
  • Has low on-state resistance RDS(on) = 4.0 Ω MAX. VGS = －2.5 V, ID = －30 mA RDS(on) = 1.5 Ω MAX. VGS = －4.0 V, ID = －500 mA.

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📁 Similar Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ202 P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving. FEATURES • Directly driven by ICs having a 3 V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Has low on-state resistance RDS(on) = 4.0 Ω MAX. VGS = －2.5 V, ID = －30 mA RDS(on) = 1.5 Ω MAX. VGS = －4.