NEC 2SJ358
The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.| Part No. | 2SJ358 |
|---|---|
| Datasheet | 2SJ358 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages● Can be directly driven by an IC operating at 5 V.
● Low on-resistance RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A 1.0 0.5 ±0.1 2.1 0.85 ±0.1 4.2 0.5 ±0.1 0.4 ±0.05 Equivalent Circuit Drain (D) Electrode Connection 1. Source Internal 2. Drain Diode 3. Gate Marking: UA2 Gate (G) Gate Protect Diode Source (S) QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS
(Ta = +25 ˚C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms Duty Cycle ≤ 1 % Mounted on ceramic board of 7.5 cm2 × 0.7 mm VGS = 0 VDS = 0 Condition...
