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2SJ358C - P-CHANNEL MOSFET FOR SWITCHING

General Description

The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.

Key Features

  • Directly driven by a 4.0 V power source.
  • Low on-state resistance RDS(on)1 = 143 m  MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 m MAX. (VGS = -4.0 V, ID = -2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SJ358C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-84 (MP-2) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XT1 Absolute.

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Datasheet Details

Part number 2SJ358C
Manufacturer Renesas
File Size 203.43 KB
Description P-CHANNEL MOSFET FOR SWITCHING
Datasheet download datasheet 2SJ358C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SJ358C P-CHANNEL MOSFET FOR SWITCHING R07DS1262EJ0300 Rev.3.00 Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features  Directly driven by a 4.0 V power source.  Low on-state resistance RDS(on)1 = 143 m  MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 m MAX. (VGS = -4.0 V, ID = -2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SJ358C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-84 (MP-2) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.