2SJ358C Datasheet P-channel MOSFET For Switching

Manufacturer: Renesas

Overview: Preliminary Data Sheet 2SJ358C P-CHANNEL MOSFET FOR SWITCHING R07DS1262EJ0300 Rev.3.

Datasheet Details

Part number	2SJ358C
Manufacturer	Renesas
File Size	203.43 KB
Description	P-CHANNEL MOSFET FOR SWITCHING
Datasheet	2SJ358C-Renesas.pdf

The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.

Directly driven by a 4.0 V power source.
Low on-state resistance RDS(on)1 = 143 m  MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 m MAX. (VGS = -4.0 V, ID = -2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SJ358C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-84 (MP-2) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XT1 Absolute.

Brand Logo	Part Number	Description	Manufacturer
	2SJ358	P-Channel MOSFET	NEC