Description
The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Features
- Directly driven by a 4.0 V power source.
- Low on-state resistance RDS(on)1 = 143 m ī MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 mī MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 mī MAX. (VGS = -4.0 V, ID = -2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SJ358C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-84 (MP-2)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XT1
Absolute.
2SJ358C Datasheet
