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2SJ604 - P-Channel Power MOSFET

General Description

The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 23 A) RDS(on)2 = 43 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 23 A).
  • Low input capacitance: Ciss = 3300 pF TYP. (VDS =.
  • 10 V, VGS = 0 V).
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) • Low input capacitance: Ciss = 3300 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VGSS ID(DC) ID(pulse) PT m 20 m 45 m 120 70 Total Power Dissipation (TA = 25°C) PT 1.