NEC 2SJ649
The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.| Part No. | 2SJ649 |
|---|---|
| Datasheet | 2SJ649 Download |
| Manufacturer |  NEC |
| Description | MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220FEATURES
● Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)● Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
● Built-in gate protection diode (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2.0 150 –55 to +150 –20 40 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
