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2SJ649 - MOS FIELD EFFECT TRANSISTOR

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NEC

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2SJ649 MOS FIELD EFFECT TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – 2SJ649

Datasheet Details

Part number	2SJ649
Manufacturer	NEC
File Size	104.53 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ649 Datasheet
Additional preview pages of the 2SJ649 datasheet.

Product details

Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 75 mΩ MAX. (VGS =.
4.0 V, ID =.
10 A).
Low input capacitance: Ciss = 1900 pF TYP. (VDS =.
10 V, VGS = 0 V).
Built-in gate protection diode (Isolated TO-220).

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Published: Jan 25, 2007 |