Datasheet4U Logo Datasheet4U.com

2SK2159 - N-CHANNEL MOS FET

Key Features

  • Capable of drive gate with 1.5 V.
  • Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03.
  • 0.05.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2159 N-Channel MOSFET Kexin
2SK2159 60V N-Channel MOSFET VBsemi
2SK215 Silicon N-Channel MOS FET Hitachi Semiconductor
2SK215 N-Channel MOSFET Renesas Technology
2SK2150 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2157 N-CHANNEL MOS FET
2SK2158 N-CHANNEL MOS FET
2SK2109 N-Channel MOSFET
2SK2110 N-Channel MOSFET
2SK2111 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders. 0.8 MIN. PACKAGE DIMENSIONS (in millimeters) 4.5 ± 0.1 1.6 ± 0.2 4.0 ± 0.25 2.5 ± 0.1 1.5 ± 0.1 1 0.42 ± 0.06 2 3 FEATURES • Capable of drive gate with 1.5 V • Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03 –0.