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2SK2369 - N-Channel MOSFET

Description

The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

15.7 MAX 4 4.7 MAX.

Features

  • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2.
  • Low Ciss Ciss = 2400 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet preview – 2SK2369

Datasheet Details

Part number 2SK2369
Manufacturer NEC
File Size 113.33 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2369 Datasheet
Additional preview pages of the 2SK2369 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP.
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