Datasheet4U Logo Datasheet4U.com

2SK2723 - SWITCHING N-CHANNEL POWER MOS FET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.

Low On-Resistance RDS (on) 1 = 40mΩ Max.

(VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.

(VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.

Low Ciss

Key Features

  • 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2725 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2725 Silicon N-Channel MOSFET Renesas
2SK2726 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2726 Silicon N-Channel MOSFET Renesas
2SK2727 Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2724 SWITCHING N-CHANNEL POWER MOS FET
2SK2040 SWITCHING N-CHANNEL POWER MOS FET
2SK2053 N-Channel MOSFET
2SK2054 N-Channel MOSFET
2SK2055 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 • Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0.2 1.5 ± 0.2 2.54 13.5MIN. 12.0 ± 0.2 FEATURES 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.