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2SK2724 - SWITCHING N-CHANNEL POWER MOS FET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A).
  • Low Ciss Ciss =1 200 pF Typ.
  • Built-in G-S Protection Diode.
  • Isolated TO-220 package 15.0 ±0.3 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 10.0 ±0.3 FEATURES • Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A) • Low Ciss Ciss =1 200 pF Typ. • Built-in G-S Protection Diode • Isolated TO-220 package 15.0 ±0.3 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3.