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2SK3326 - N-Channel MOSFET

General Description

The 2SK3326 is N-Channel DMOS FET device that

Key Features

  • a low gate charge and excellent switching characteristics, and designed for high voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3326 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.