2SK3385 - N-Channel MOSFET

NEC

General Description

The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Low On-state Resistance 5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A).
Low Ciss : Ciss = 1500 pF TYP.
Built-in Gate Protection Diode.
TO-251/TO-252 package (TO-251).

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2SK3385 n-channel mosfet by NEC - Datasheet Preview

Datasheet Details

Part number	2SK3385
Manufacturer	NEC
File Size	42.07 KB
Description	N-Channel MOSFET
Datasheet	2SK3385 Datasheet

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Other Datasheets by NEC

Part Number	Description
2SK3386	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3385 2SK3385-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance 5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1500 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) 5 5 Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±30 ±100 36 1.