2SK3507
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
.. a low on-state resistance and excellent switching characteristics,
ORDERING INFORMATION
PART NUMBER 2SK3507-ZK PACKAGE TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
- 4.5 V drive available
- Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)
- Low gate charge QG = 8.5 n C TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
- Built-in G-S protection diode
- Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 ±16 ±22 ±45 20 1.5 150
- 55 to +150 10 10
V V A A W W °C °C A m J
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3...
